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1. 发明专利

JP2012244076A Press contact type semiconductor device 审中-公开
标题翻译：新闻联系型半导体器件
公开(公告)号：JP2012244076A
公开(公告)日：2012-12-10
申请号：JP2011115248
申请日：2011-05-23
申请人： Honda Motor Co Ltd , 本田技研工業株式会社
发明人： SHIBA KEISUKE , WATANABE SHOHEI
IPC分类号： H01L21/52 , H01L23/28
CPC分类号： H01L24/33
摘要： PROBLEM TO BE SOLVED: To provide a press contact type semiconductor device capable of suppressing contamination and warp of a semiconductor element.SOLUTION: A press contact type semiconductor device 1 is formed by pressurizing and holding, by a pair of electrode plates 3 and 3, a semiconductor element 2 including a semiconductor substrate 4, a first emitter electrode layer 51 and a second emitter electrode layer 52 laminated on a front surface side of the semiconductor substrate 4, and a first collector electrode layer 61 and a second collector electrode layer 62 laminated on a back surface side of the semiconductor substrate 4. The first emitter electrode layer 51 and the second emitter electrode layer 52 are formed respectively into a prescribed pattern shape, the first collector electrode layer 61 covers the entire back surface of the semiconductor substrate 4, and an outer peripheral end part 62a of the second collector electrode layer 62 roughly matches with an outer peripheral end part 52a of the second emitter electrode layer 52 in a projection view in a pressurizing direction T by the pair of electrode plates 3 and 3.
摘要翻译：解决的问题：提供能够抑制半导体元件的污染和翘曲的压接式半导体器件。解决方案：通过一对电极板3和3加压并保持包括半导体衬底4，第一发射极电极层51和第二发射极电极的半导体元件2，形成压接式半导体器件1 层叠在半导体基板4的表面侧的层52以及层叠在半导体基板4的背面侧的第一集电电极层61和第二集电极层62.第一发射极电极层51和第二发射极电极层52分别形成为规定的图案形状，第一集电电极层61覆盖半导体基板4的整个背面，第二集电极层62的外周端部62a与外周端第二发射极电极层52的部分52a在一对电极板3和3的加压方向T的投影视图中。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012234962A Pressure-welded semiconductor device and manufacturing method therefor 审中-公开
标题翻译：压电半导体器件及其制造方法
公开(公告)号：JP2012234962A
公开(公告)日：2012-11-29
申请号：JP2011102364
申请日：2011-04-28
申请人： Honda Motor Co Ltd , 本田技研工業株式会社
发明人： WATANABE SHOHEI , SHIBA KEISUKE
IPC分类号： H01L21/52 , H01L23/48
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a pressure-welded semiconductor device in which plastic deformation of an electrode plate due to pressure-welding can be prevented.SOLUTION: The pressure-welded semiconductor device 1 comprises: a semiconductor substrate 11; a plurality of rows of gate wiring 15 formed on the semiconductor substrate 11; a plurality of insulation parts 17 formed to cover the side surface and the upper surface of the gate wiring 15; an emitter electrode 16 formed to fill the space between the gate wirings 15 covered by the insulation part 17 and to cover the upper surface of the insulation part 17 and having a flat surface; and an upper electrode plate 21 pressure-welded to the emitter electrode 16.
摘要翻译：要解决的问题：提供一种可以防止由于压焊引起的电极板的塑性变形的压焊半导体器件。解决方案：压焊半导体器件1包括：半导体衬底11; 形成在半导体基板11上的多列栅极布线15; 形成为覆盖栅极布线15的侧面和上表面的多个绝缘部17; 形成为填充由绝缘部17覆盖的栅极布线15之间的空间并覆盖绝缘部17的上表面并具有平坦表面的发射极电极16; 和压电焊接到发射电极16的上电极板21.版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2011249438A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011249438A
公开(公告)日：2011-12-08
申请号：JP2010118970
申请日：2010-05-25
申请人： Honda Motor Co Ltd , 本田技研工業株式会社
发明人： SHIBA KEISUKE , SATO SHINNOSUKE
IPC分类号： H01L29/739 , H01L21/28 , H01L21/336 , H01L21/52 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L24/27 , H01L24/83 , H01L24/95 , H01L2224/83192 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which an emitter and a gate finger electrode having a desired thickness can be formed without requiring exact control of etching thickness in the etching of a pressure-contact IGBT having an emitter and a gate finger electrode consisting of an extremely thin metal film.SOLUTION: The method for manufacturing a semiconductor device used in a pressure-contact semiconductor includes: a step for forming a first Al layer on an Si substrate; a step for etching a part of the first Al layer so that an emitter electrode and a gate finger electrode having a desired shape can be obtained; a step for forming an underlying layer consisting of a metal other than Al on the first Al layer; a step for forming a second Al layer on the underlying layer; a step for coating a part of the second Al layer corresponding to the emitter electrode with resist; a step for etching the second Al layer other than the part coated with resist; a step for etching the underlying layer other than the part coated with resist; and a step for removing the resist.
摘要翻译：解决的问题：提供一种制造半导体器件的方法，其中可以形成具有期望厚度的发射极和栅极指电极，而不需要精确地控制蚀刻厚度的压接触点IGBT，由极薄的金属膜构成的发射极和栅极指状电极。解决方案：用于制造用于压接半导体的半导体器件的方法包括：在Si衬底上形成第一Al层的步骤; 用于蚀刻第一Al层的一部分以便可以获得具有期望形状的发射极和栅极指电极的步骤; 在第一Al层上形成由Al以外的金属构成的下层的工序; 在下层上形成第二Al层的步骤; 用抗蚀剂涂覆对应于发射极的第二Al层的一部分的步骤; 用于蚀刻除了涂覆有抗蚀剂的部分之外的第二Al层的步骤; 用于蚀刻除了涂覆有抗蚀剂的部分之外的下层的步骤; 以及去除抗蚀剂的步骤。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2001337424A REUSABLE SPOOL AND METHOD FOR RECOVERING AND REUSING THE SAME 失效
公开(公告)号：JP2001337424A
公开(公告)日：2001-12-07
申请号：JP2000158103
申请日：2000-05-29
申请人： PANAKKU KOGYO KK , FUJI PHOTO FILM CO LTD
发明人： UCHIDA TAKEYOSHI , SAIKAI YOSHIO , SHIBA KEISUKE
IPC分类号： G03B15/00 , B65D85/672 , G03C3/00
摘要： PROBLEM TO BE SOLVED: To provide a method for inexpensively and industrially recovering and reusing a spool of high quality from a discharged cartridge for a 135 film or a discharged spool for the 135 film, and to provide the spool which is recovered by introducing the recovering and reusing method and to provide the spool which is suitable to the recovering and reusing method. SOLUTION: As for the method for recovering and reusing the spool from the discharged cartridge without crushing the spool, the method successively includes a process of distinguishing the kind of the discharged cartridge, a process of detaching at least one cap from the barrel part of the cartridge, a process of pulling the spool out of the cartridge, a process of washing the spool and a process of inspecting the shape of the spool and the number of using times, and as for the reusable spool, the number of using times is recorded on the cartridge.

5. 发明专利

JP2731972B2 失效
公开(公告)号：JP2731972B2
公开(公告)日：1998-03-25
申请号：JP19916290
申请日：1990-07-30
申请人： FUJI SHASHIN FUIRUMU KK
发明人： SHIBA KEISUKE , AKAO MUTSUO
IPC分类号： G03C3/00 , C08L87/00 , C08L101/16

6. 发明专利

JP2640394B2 失效
公开(公告)号：JP2640394B2
公开(公告)日：1997-08-13
申请号：JP5795791
申请日：1991-02-27
申请人： PANATSUKU KOGYO KK , FUJI SHASHIN FUIRUMU KK
发明人： SHIBA KEISUKE , NAKAMURA ISAMOCHI
IPC分类号： C08J11/00 , C08J11/04 , G03C11/24

7. 发明专利

JP2557214B2 失效
公开(公告)号：JP2557214B2
公开(公告)日：1996-11-27
申请号：JP16880586
申请日：1986-07-17
申请人： FUJI PHOTO FILM CO LTD
发明人： OGAWA TADASHI , SHIBA KEISUKE
IPC分类号： G03C1/76 , G03C1/035 , G03C1/34 , G03C7/30 , G03C7/32 , G03C7/392

8. 发明专利

JP2514054B2 失效
公开(公告)号：JP2514054B2
公开(公告)日：1996-07-10
申请号：JP30416687
申请日：1987-12-01
申请人： FUJI PHOTO FILM CO LTD
发明人： SHIBA KEISUKE , ICHIJIMA YASUSHI , SAKAGAMI MEGUMI
IPC分类号： G03C7/32 , G03C1/035 , G03C7/333

9. 发明专利

JPH0717110A SMALL-SIZED PRINTER 失效
公开(公告)号：JPH0717110A
公开(公告)日：1995-01-20
申请号：JP16442893
申请日：1993-07-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OSATO KENICHI , SHIBA KEISUKE
IPC分类号： B41J29/00 , G07B1/08
摘要： PURPOSE:To provide a small-sized printer which can be operated by one hand also operated easily and conveniently. CONSTITUTION:A printer consists of an input means 20 for inputting the data such as the payment amount, a display section 29 for displaying the data of a receiver, a main body case 22 provided with a printing means 30 with an exposed printing section 30a on the same level as said input means and display section and a second housing section 33 hinged on the main body case 22 in a manner of fitting a check sheet 21 on the surface facing the printing section 30a. One hand operation can be performed easily by the arrangement, and the small-sized printer which can print on the check and the like smoothly and can be operated easily and conveniently is provided.

10. 发明专利

JPH0497345A SUBSTRATE FOR STEREOSCOPIC COLOR PHOTOGRAPH HAVING SURFACE ANTIREFLECTION LAYER, SILVER HALIDE PHOTOSENSITIVE MATERIAL AND STEREOSCOPIC COLOR PHOTOGRAPH PRINT 失效
公开(公告)号：JPH0497345A
公开(公告)日：1992-03-30
申请号：JP21487590
申请日：1990-08-14
申请人： FUJI PHOTO FILM CO LTD
发明人： SHIBA KEISUKE , TAGUCHI SEIICHI , ITO MITSURU
IPC分类号： G03C9/02 , G02B1/11 , G02B1/113 , G02B1/14 , G03C7/14
摘要： PURPOSE:To obtain a natural stereoscopic feel, excellent color gradation of images and sharpness without allowing the surface of a lenticule to be sensed by specifying the transmittance of a base to >=70% and providing an interference film as a surface antireflection layer on the surface of the lenticule. CONSTITUTION:The transmittance of the surface is >=70% and the interference film is provided as the surface antireflection layer on the surface of the lenticule. The transmittance of the substrate with the lenticule is >=70%, more preferably >=80% in this case. The surface antireflection layer lowers the surface reflectivity of the lenticule without substantially spoiling the lens function. Since a transparent thermoplastic resin or the like is used for the lenticule, the interference film of light is preferably formable without applying physical deformation in a limited low temp. region, for example,

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